Swansea University
About the Project
Funding providers: Swansea University Strategic Partnership Research Scholarships (SUSPRS) with Université Grenoble Alpes, France
Subject areas: Semiconductors
Project start date:
- 1 October 2024 (Enrolment open from mid-September)
Supervisors:
- Professor Karol Kalna (Swansea – [email protected]) and Dr Didier Chaussende (Grenoble)
- Professor Mike Jennings (Swansea)
Aligned programme of study: PhD in Electronic & Electrical Engineering
Mode of study: Full-time
Project description:
This is a joint PhD programme between Swansea University and Université Grenoble Alpes.
Established in 2012/13, the Swansea and Grenoble (UGA) Institutional Strategic Partnership was one of the first major strategic partnerships between a UK and French university. It is a unique, institutional-wide multi-disciplinary collaboration, which includes joint research and publication, student and staff exchange, joint PhDs and joint master’s programmes. Over 30 Joint Doctoral Degrees have been developed through the strategic partnership to date, across diverse subject areas, including medicine, engineering and law. Candidates spend 50% of their time in both Swansea and Grenoble and are jointly supervised by academic staff from both universities. Successful candidates receive a double degree from the Université Grenoble Alpes and Swansea University.
Embark on a transformative journey with our PhD scholarship in Power Electronics. This research focuses on wide band gap semiconductors, a vital technology for energy processing and distribution.
This PhD studentship is an opportunity to contribute to a pioneering research project on cubic silicon carbide (3C-SiC) power electronic transistors. This project is a culmination of extensive research efforts by our dedicated team at Grenoble and Swansea, who have made significant strides in the field of wide-bandgap power electronics. The research aims to explore the potential of 3C-SiC, a novel polytype of silicon carbide (SiC), in overcoming the limitations of its hexagonal counterpart (4H-SiC). Unlike other materials, 3C-SiC offers a unique advantage – it can be doped, n- or p-type, over a wide range of resistivity, making it a promising candidate for power electronic applications. The 4H-SiC power electronic transistors suffer from low channel mobility, contact resistance, and poor reliability. The cubic polytype of SiC, 3C-SiC, can overcome these obstacles.
Eligibility
Candidates must hold a UK bachelor’s degree with a minimum of Upper Second Class honours or overseas bachelor’s degree deemed equivalent to UK honours (by UK ECCTIS) and achieved a grade equivalent to UK Upper Second Class honours in Engineering or similar relevant science discipline. If you are eligible to apply for the scholarship but do not hold a UK degree, you can check our comparison entry requirements. Please note that you may need to provide evidence of your English Language proficiency.
Applicants must hold a master’s qualification to comply with Grenoble’s admissions requirements.
English Language: IELTS 6.5 Overall (with no individual component below 5.5) or Swansea University recognised equivalent.
This scholarship is open to candidates of any nationality.
ATAS
Please note that the programme requires some applicants to hold ATAS clearance, further details on ATAS scheme eligibility are available on the UK Government website.
ATAS clearance IS NOT required to be held as part of the scholarship application process, successful award winners (as appropriate) are provided with details as to how to apply for ATAS clearance in tandem with scholarship course offer.
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