Postdoctoral Researcher in Ultra-High Power Wide Bandgap Semiconductor RF Devices: Thermal Design & Optical Characterization

Job title:

Postdoctoral Researcher in Ultra-High Power Wide Bandgap Semiconductor RF Devices: Thermal Design & Optical Characterization

Company

University of Bristol

Job description

The roleApplications are invited for the role of Postdoctoral Researcher in the , to contribute to the advancement of ultra-high power GaN RF devices. This role is focused on research to enable ultra-high power GaN RF devices, including developing new laser-based optical systems to study temperature as well as electric fields that limits device performance and reliability, with sub-micron spatial resolution, in the context of studying and designing new material & device structures. Prior expertise in optical laser-based systems is therefore of benefit for this position.What will you be doing?Device performance, in particular the maximum power density, is often limited by heat extraction. Commercial devices operate at 5-10 W/mm, however there is need for next generation devices that allow 80-100 W/mm, a dramatical increase in power density. This requires not only radically improving heat extraction from GaN devices through integration with high thermal conductivity materials such as diamond, but also developing advanced device concepts to manage electric field distribution in the devices; you will design & implement new optical laser-based systems to study these. You will have the opportunity to study unique device structures, to apply new thermal imaging techniques for nm-scale devices, to access the extensive device testing suite available in Bristol, from advanced electrical, thermal to electric field analysis of devices, and simulation tools (ATLAS, ANSYS), and to collaborate within our 25-member team as well as with our industrial partners. The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the , focusing on GaN, Gallium Oxide, SiC & diamond power materials and devices, from their fundamental understanding and development, to the commercialization of device technology in part co-designed with industry. This position also benefits from the Chair in Emerging Technologies awarded to Professor Kuball, Director of the CDTR, by the Royal Academy of Engineering (RAEng), and various US funded programmes the CDTR is partnered in. This research position will give you the opportunity to make a major impact on future RF device technology.You should apply ifApplicants should have postgraduate (PhD) experience in Physics, Materials Science or Engineering, with a good publication record. The position requires extensive expertise in optical characterization system design & measurement techniques, a good understanding of device physics, as well as an interest in device simulations. A willingness to work together with, and co-supervise, PhD students of the CDTR will be necessary.Additional informationContract type: Open ended with fixed funding for 2 yearsSchool/Unit: School of PhysicsFor informal queries, contact details:Professor M. Kuball, , tel +44(0)117 928 8734We are unable to accept any applications via email. Only applications submitted via the recruitment system will be considered. To apply, please click on the “apply” button on the right hand side of this page.Our strategy and missionWe recently launched our to 2030 tying together our mission, vision and values.The University of Bristol aims to be a place where everyone feels able to be themselves & do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, & retain individuals with different experiences, backgrounds and perspectives – particularly people of colour, LGBT+ and disabled people – because diversity of people & ideas remains integral to our excellence as a global civic institution.£37,099 to £41,732. Grade I, per annum

Expected salary

£37099 – 41732 per year

Location

Bristol Area

Job date

Fri, 23 Aug 2024 00:13:14 GMT

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